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| Datasheet File OCR Text: |
| Gunter Semiconductor GmbH P Channel Power MOSFET GFC9034 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175 Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D38 Dimension 3.64mm x 3.86mm Thickness: 400 m Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 12 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperatre Storage Temperature @Ta=25 Symbol -V(BR)DSS RDS(ON) --ID@25 --ID@100 Tj Limit Unit Test Conditions - VGS=0V, -ID=250 - VGS=10V, - ID=11 - VGS=10V - VGS=10V 60 0.14 18 13 -55~175 -55~175 V A A TSTR Target Device: IRF9Z34 TO-220AB PD 88 W @Tc=25 |
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